We have developed a fundamentally new class of photoresist matrix resins for use in 193 and 248 nm lithography based on cycloolefin-maleic anhydride alternating copolymers. When used in three-component formulations with cholate-based dissolution inhibitions (DIs) and conventional photoacid generators, these copolymers afford positive-tone resists with potential sub-0.25 micrometer image fidelity. The resists exhibit high contrast (3 - 5.5) and high sensitivity (3 - 5 mJ/cm2 at 248 nm, depending on exact formulation) with low loadings (ca. 1 wt%) of triphenylsulfonium salt photoacid generators. These formulations are sufficiently transparent to be used at 193 nm without further modification.