Resonant Raman scattering at the saddle-point singularity inInxGa1xAs

Abstract
Resonant Raman scattering results are reported at the E1 critical point of mixed Inx Ga1xAs crystals. The scattering amplitude shows resonance enhancement which diminishes with increasing x, corresponding to increasing compositional disorder in the alloy. For large disorder the Van Hove singularities are smeared out which is reflected in the light scattering.