Resonant carrier capture by semiconductor quantum wells

Abstract

We present the results of a quantum-mechanical calculation of τ, the average capture time of a carrier by a quantum well. The capture is induced by the emission of longitudinal optical phonons. The time τ displays strong oscillations versus the well thickness. These oscillations are associated with the binding of a new state by the well and with the occurrence of a quantum-well virtual bound state within one LO phonon energy from the edge of the quantum-well continuum. Holes are calculated to be more efficiently captures than electrons.