The technique of ion plating, which is widely used for the deposition of metallic films, has been successfully applied to the deposition of II–VI compounds by using high-voltage rf instead of dc biasing of the substrate. As a hybrid of evaporation and bias sputtering, this technique retains the advantages while avoiding most of the disadvantages of each. The deposited films have the uniformity and adherence of bias-sputtered films but are deposited as rapidly as evaporated films. The inherent potential of this method for ion implantation has been explored in doping ZnSe up to 1% with P and Li. The resistivity of freshly prepared ZnSe: Li films was of the order of 105–106 Ω cm; however, it increased rapidly upon exposure to light or moisture and made type determination unfeasible.