A study of amorphous semiconductor interfaces by spectroscopic ellipsometry
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 1003-1006
- https://doi.org/10.1016/0022-3093(85)90830-0
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eVPhysical Review B, 1984
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown OxideJournal of the Electrochemical Society, 1980
- Effects of component optical activity in data reduction and calibration of rotating-analyzer ellipsometersJournal of the Optical Society of America, 1974