Photoconductivity of chromium-compensated GaAs after irradiation by 0.8-MeV electrons
- 1 April 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (4), 1921-1922
- https://doi.org/10.1063/1.1662483
Abstract
The photoconductive response to infrared light of high‐resistivity chromium‐compensated GaAs is examined before and after irradiation (at 300°K) with 0.8‐MeV electrons. The typical spectrum of this material is observed for the unirradiated case. After irradiation two induced levels were observed; a deep trap at Ec − 1.32 eV and a level at Ec − 0.54 eV. For high fluences the band gap exhibits striking changes and infrared response was no longer seen at energies below 0.52 eV. Isochronal anneals to 350°C restored the photoconductivity spectrum to a semblance of the unirradiated case.Keywords
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