Dislocations in GaAs single crystals grown by the Czochralski method
- 1 September 1968
- journal article
- Published by Springer Nature in Czechoslovak Journal of Physics
- Vol. 18 (9), 1172-1176
- https://doi.org/10.1007/bf01690021
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Turbulent Free Convection in Czochralski Crystal GrowthJournal of Applied Physics, 1965
- Dislocation Etch Pits in GaAsJournal of Applied Physics, 1964
- The Growth of Crystals from Compounds with Volatile ComponentsJournal of the Electrochemical Society, 1963
- Growth of GaAs Crystals in the 〈111〉 Polar DirectionJournal of Applied Physics, 1960