Low-temperature epitaxial growth of Si and Ge and fabrication of isotopic heterostructures by direct ion beam deposition
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 975-982
- https://doi.org/10.1016/s0168-583x(87)80195-7
Abstract
No abstract availableKeywords
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