A GaAs/AlxGa1-xAs multiple quantum well laser with a 3 dB electrical modulation bandwidth of 16 GHz has been developed. Optimized design of the waveguide, including implementation of high average Al mole fraction (xeff equals 0.8) GaAs/AlAs binary short-period superlattice cladding layers, together with a coplanar electrode geometry, has resulted in a vertically compact laser structure suitable for integration.