Very high purity InP epilayer grown by metalorganic chemical vapor deposition

Abstract

Very high purity InP epilayers have been grown by low‐pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×10¹³ cm⁻³ , with Hall mobility as high as 6000 cm² V⁻¹ s⁻¹ at 300 K and 200 000 cm² V⁻¹ s⁻¹ at 50 K have been measured. These results and photoluminescence at 2 K showed that it is the purest InP epilayer ever reported in the literature, with zero compensation ratio.