Submicrometer Self-Aligued GaAs MESFET (Short Papers)
- 1 June 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 24 (6), 372-376
- https://doi.org/10.1109/tmtt.1976.1128857
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Gallium arsenide self-aligned gate field-effect transistorsProceedings of the IEEE, 1971
- Metallization Processes in Fabrication of Schottky-barrier FET'sIBM Journal of Research and Development, 1970
- Silicon and Silicon-dioxide Processing for High-frequency MESFET PreparationIBM Journal of Research and Development, 1970
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966