Structure and Properties of Boron Nitride Films Grown by High Temperature Reactive Plasma Deposition

Abstract

Thin films of boron nitride were grown by reactive plasma deposition using the ammonia‐diborane reaction. The crystalline growth on substrates of silicon, compression‐annealed pyrolytic graphite, and compression‐annealed pyrolytic was investigated by electron microscopy, and composition of the deposited material was determined by electron microprobe analysis. The effect of gas ratio and substrate temperature on growth rate was also investigated. Some crystalline order was observed; the largest single crystal grains were obtained on compression‐annealed pyrolytic graphite. Resistivities of the order of were measured with dielectric constant varying from 2.7 to 7.7 for growth with different gas ratios. Efforts to determine the drift velocity of carriers in thin films of were not successful.