Hall mobility and carrier repopulation of n-type silicon at high electric fields
- 18 November 1968
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 28 (3), 202-203
- https://doi.org/10.1016/0375-9601(68)90201-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Longitudinal Magnetoresistance and Hall Mobility of n-Type Germanium at High Electric FieldsJournal of Applied Physics, 1967
- Conductivity anisotropy ofn-type silicon in the range of warm and hot carriersThe European Physical Journal A, 1965
- Conductivity anisotropy and hot electron temperature in siliconJournal of Physics and Chemistry of Solids, 1964