Variable-characteristic p—n-junction devices based on reversible ion drift
- 30 June 1963
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 6 (3), 297-307
- https://doi.org/10.1016/0038-1101(63)90087-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Characteristics of p-i-n Junctions Produced by Ion-Drift Techniques in SiliconJournal of Applied Physics, 1962
- Details of Ion Drift in an n-p JunctionJournal of Applied Physics, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960
- Mobility of Impurity Ions in Germanium and SiliconPhysical Review B, 1954