Low-Temperature Passivation of Semiconductor Devices and Their Reliability

Abstract

Some electrical and physical characteristics of integrated circuits with passivation by low-temperature vapor deposition of glass were studied. It was found that 1) passivated devices have more resistance to aluminum corrosion than nonpassivated devices, 2) during temperature cycling the glass on the top of the aluminum inhibits the formation of hillocks, and 3) passivated devices offer more protection from mechanical abrasions and foreign materials. Some electrical parameters of transistors as well as integrated circuits were measured before and after passivation; no significant differences were found. No degradation on these parameters was found after a 1000-hour operating life test on passivated and nonpassivated units.