Comparison of site-specific densities of states of Ga and As in cleaved and sputtered GaAs(110) by means of Auger line shapes
- 31 December 1981
- journal article
- Published by Elsevier in Journal of Electron Spectroscopy and Related Phenomena
- Vol. 23 (1), 25-38
- https://doi.org/10.1016/0368-2048(81)85034-7
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Surface reactions and interdiffusionJournal of Vacuum Science and Technology, 1979
- Chemical mechanisms of Schottky barrier formationJournal of Vacuum Science and Technology, 1979
- Chemical and structural properties of the Pd/Si interface during the initial stages of silicide formationJournal of Vacuum Science and Technology, 1979
- Review of binary alloy formation by thin film interactionsJournal of Vacuum Science and Technology, 1979
- Oxidation of ordered and disordered GaAs(110)Journal of Vacuum Science and Technology, 1979
- Abstract: Total reflection x-ray diffraction studies of the formation and the geometrical structure of Al–Ge(100) interfacesJournal of Vacuum Science and Technology, 1979
- Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bendingPhysical Review B, 1976
- Texture of surfaces cleaned by ion bombardment and annealingSurface Science, 1970
- LEED-investigation of step arrays on cleaved germanium (111) surfacesSurface Science, 1970
- LEED Beam Broadening as a Result of Sputtering DamageJournal of Applied Physics, 1966