Effect of impurities on the transport properties in the Van Hove scenario

Abstract

Using standard transport theory, we calculate the temperature and doping dependence of the resistivity and diffusion thermopower due to impurity scattering for two-dimensional electrons whose Fermi energy is close to a Van Hove point. An argument is presented for the doping dependence of the diffusion thermopower for arbitrary scattering in this so-called Van Hove scenario. © 1996 The American Physical Society.