Velocity∕field characteristic of GaxIn1−xSb calculated by the Monte Carlo method

Abstract

The velocity/field characteristics of Ga_xIn_1−xSb are calculated by the Monte Carlo method for x= 0.3 to 1.0. The effects of temperature and ionized-impurity scattering are also taken into account. Ga_0.5In_0.5Sb is shown to be the most suitable, material for low-power dissipation transferred-electron devices.