Low Energy Proton Irradiation of Silicon Surface Barrier Detectors
- 1 January 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 17 (6), 245-249
- https://doi.org/10.1109/tns.1970.4325800
Abstract
Capacitance-voltage curves and low temperature capacitance-recovery techniques are used to determine the defect generation rate and energy levels in the depletion region of surface barrier radiation detectors (Schottky diodes) irradiated with low energy(.2 - .4MeV) protons. The damage rate is about 1.3 × 10-2; net donor defects per proton, independent of energy. Most of the damage is created close to the end of the proton range. After room temperature stabilization energy levels were found at Ec - 0.24, Ev + .26, Ev + .32, and Ec - .47. The capture cross sections suggest that the second and fourth levels are donors and the third an acceptor. The fourth is the major level. Most of the damage anneals in the 100°C to 200°C range. These properties do not correlate well with the properties of the divacancy, a defect prominent in neutron irradiated silicon. The annealing behavior, on the other hand, suggest that the major defect is the Si P-3 defect.Keywords
This publication has 5 references indexed in Scilit:
- ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICONApplied Physics Letters, 1969
- Low-Energy Proton Damage Effects in Silicon Surface-Barrier DetectorsIEEE Transactions on Nuclear Science, 1968
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Spin-1 Centers in Neutron-Irradiated SiliconPhysical Review B, 1963
- Electron-Bombardment Damage in SiliconPhysical Review B, 1958