Integrated 84ps ECL with I2L
- 1 January 1984
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XXVII, 152-153
- https://doi.org/10.1109/isscc.1984.1156658
Abstract
A side wall base contact structure used to fabricate 84ps ECL and 320ps I2L circuits with gate areas of 3500μm2and 112μm2will be covered.Keywords
This publication has 1 reference indexed in Scilit:
- Self-aligned transistor with sidewall base electrodeIEEE Transactions on Electron Devices, 1982