Characterizations of palladium silicides formed by rapid thermal annealing
- 1 December 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (11), 4200-4206
- https://doi.org/10.1063/1.335553
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicideJournal of Applied Physics, 1985
- Incoherent radiative processing of titanium silicidesThin Solid Films, 1984
- High temperature stability of PtSi formed by reaction of metal with silicon or by cosputteringJournal of Applied Physics, 1983
- Resistivities of Thin Film Transition Metal SilicidesJournal of the Electrochemical Society, 1982
- Thermal stability of Pd2Si and PdSi in thin film and in bulk diffusion couplesJournal of Applied Physics, 1982
- Compounds in the Pd-Si and Pt-Si system obtained by electron bombardment and post-thermal annealingJournal of Applied Physics, 1981
- The growth and transformation of Pd2Si on (111), (110) and (100) SiThin Solid Films, 1973
- Thermal stability of thin PtSi films on silicon substratesJournal of Applied Physics, 1972
- Interdiffusion and compound formation in thin films of Pd or Pt on si single crystalsPhysica Status Solidi (a), 1971
- Some Notes on the Palladium-Silicon System.Acta Chemica Scandinavica, 1966