Nonlinear intersubband optical absorption in a semiconductor quantum well
- 1 October 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (7), 3052-3055
- https://doi.org/10.1063/1.339369
Abstract
The third-order nonlinear intersubband absorption in a semiconductor quantum well is studied theoretically using the density matrix formalism including intrasubband relaxation. It is shown that the peak absorption is reduced by half for an optical intensity 1 MW/cm2 for the well size L=126.5 Å with 3.0×1016/cm3 electrons.Keywords
This publication has 14 references indexed in Scilit:
- Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structuresApplied Physics Letters, 1986
- Electric-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rulesIEEE Journal of Quantum Electronics, 1986
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Nonlinear optical properties of semiconductor superlatticesJournal of Applied Physics, 1985
- Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structuresJournal of the Optical Society of America B, 1985
- Optical nonlinearity, bistability, and signal processing in semiconductorsJournal of the Optical Society of America B, 1985
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Optical Absorption of GaAs-AlGaAs Superlattice under Electric FieldJapanese Journal of Applied Physics, 1985
- Dynamic non-linear optical processes in semiconductorsAdvances in Physics, 1981
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974