Electron scattering profiles in SOS films measured by temperature-dependent Hall effect
- 1 January 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (16), 566-567
- https://doi.org/10.1049/el:19810397
Abstract
The electron scattering mechanisms at every depth in heteroepitaxial SOS films have been investigated by measuring the temperature dependence of Hall mobility. It appears that, above the ‘critical’ temperature Tc=120 K, lattice scattering prevails only in the proximity of 1/SiO, while ionised impurity scattering becomes dominant near the substrate (2000 Å from Si/Al2O3) even at room temperature.This publication has 1 reference indexed in Scilit:
- Heteroepitaxial Semiconductors for Electronic DevicesPublished by Springer Nature ,1978