FORWARD CURRENT-VOLTAGE CHARACTERISTICS AND DIFFERENTIAL RESISTANCE PEAK OF A SCHOTTKY BARRIER DIODE ON HEAVILY DOPED SILICON

Abstract

An analysis of the forward current‐voltage data for a temperature range of 77.2° to 423°K on a Cr–Si (N_D = 7 × 10¹⁸ cm⁻³) Schottky barrier diode is given. The I‐V behavior of such a diode, which obviously does not follow the simple Schottky theory, is not explained by the more recent calculations of Padovani and Stratton, and of Crowell and Rideout in which field emission is taken into account. It is observed that the peak in differential resistance and its variation with voltage on such a diode is in reasonable agreement with the theories of Stratton and Padovani, and of Crowell and Rideout.