InAs1-xPx as a Thermoelectric Material

Abstract

Measurements of the electrical conductivity σ, the thermal conductivity K, and the Seebeck coefficient (thermoelectric power) α, of InAs_1−xP_x have been made at high temperatures with x varying from 0 to 0.4. Between 450° and 800°C, the average thermoelectric figure of merit (z = α²σ/K) increases moderately with x for small values of x, reaching a maximum near x = 0.1, and subsequently decreasing. Between 450 and 800°C, the average z for x = 0.1 is equal to 0.63 × 10⁻³(°K)⁻¹, a 15% improvement over InAs. For the same figure of merit, the Seebeck coefficient and electric resistivity is higher in the ternary than in the binary InAs; this is advantageous for the design of thermoelectric devices. Previous values for the thermoelectric figure of merit of InAs are revised.