A single-transistor ferroelectric memory cell
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper describes a type of ferroelectric non-volatile memory ferroelectric floating gate RAM (FFRAM) as a new type of ferroelectric memory FET that can consist of a single-transistor cell. Such a cell has several advantages, including a non-destructive read out and simple high-level integration.Keywords
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