Optimum gain-bandwidth limitations of transistor amplifiers as reactively constrained active two-port networks
- 1 June 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Circuits and Systems
- Vol. 22 (6), 523-533
- https://doi.org/10.1109/tcs.1975.1084074
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Broad-Band Microwave Class-C Transistor AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1973
- Gain-Bandwidth Limitations of Microwave Transistor AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1973
- Broadband Microwave Field-Effect Transistor AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1971
- Tables of Impedance Matching Networks Which Approximate Prescribed Attenuation Versus Frequency SlopesIEEE Transactions on Microwave Theory and Techniques, 1971
- Unilateral gain and stability criterion of active two-ports in terms of scattering parametersProceedings of the IEEE, 1966
- Tables of Maximally Flat Impedance-Transforming Networks of Low-Pass-Filter Form (Correspondence)IEEE Transactions on Microwave Theory and Techniques, 1965
- A New Theory of Broad-band MatchingIEEE Transactions on Circuit Theory, 1964
- Explicit formulas for Chebyshev impedance-matching networks, filters and interstagesProceedings of the Institution of Electrical Engineers, 1964
- Tables of Chebyshev impedance–transforming networks of low-pass filter formProceedings of the IEEE, 1964
- Theoretical limitations on the broadband matching of arbitrary impedancesJournal of the Franklin Institute, 1950