Effect of disorder on direct and indirect band gaps of semiconductor alloys
- 15 November 1974
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 15 (10), 1607-1611
- https://doi.org/10.1016/0038-1098(74)91195-8
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Electroreflectance and Band Structure ofAlloysPhysical Review B, 1972
- Band Gaps of Semiconductor AlloysPhysical Review B, 1972
- Photoluminescence Processes inat 2°KPhysical Review B, 1971
- Electronic Structure and Luminescence Processes in In1−xGaxP AlloysJournal of Applied Physics, 1971
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970
- Conduction bands of GaxIn1−xAs and InAsxSb1−xalloysCanadian Journal of Physics, 1970
- Electroreflectance measurements in mixed III–V alloysCanadian Journal of Physics, 1969
- Symmetry of Electron States in GaPPhysical Review Letters, 1968
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- The valence band structure of the III–V compoundsJournal of Physics and Chemistry of Solids, 1962