MOCVD growth of selectively doped AlInAs/GaInAs heterostructures and its application to HIFETs (heterointerface FETs)

Abstract

For the first time selectivly doped AlInAs/GaInAs heterostructures lattice-matched to InP were successfully grown by MOCVD. Mobility as high as 10500 cm2/Vs (ns=2.7×1012cm-2) was obtained at room temperature. We fabricated a HIFET (heterointerface FET) 1.5 μm in gate length using the heterostructure, and it showed a transconductance of 302 mS/mm.