Stress Anisotropy in Ni-Fe Thin Films

Abstract

The effective domain anisotropy energy of Baltzer has been extended to a simple, randomly oriented polycrystalline, single domain thin film under the influence of an isotropic planar and linear stress system. Energy equilibrium conditions lead to the definition of an average effective rotational anisotropy field, $H_s$ . Utilization of the monocrystal data of Hegg, and Bozorth, and Walker for Ni‐Fe with the linear stress determination of MacDonald permits a qualitative prediction of $H_s$ . Measurements of $H_c$ , and $H_k$ on evaporrated Ni‐Fe thin films for three substrate temperatures at various compositions indicate the existence of a stress anisotopy below possibly a recrystallization temperature, which varies with composition.