Dielectric properties of silicon nitride films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition at low temperature
- 21 July 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (3), 336-337
- https://doi.org/10.1063/1.119531
Abstract
The dielectric properties of amorphous silicon nitride (SiNx) films that were prepared by microwave electron cyclotron resonance plasma chemical vapor deposition at low temperature in the frequency range 5 Hz–1 MHz have been investigated. The dielectric dispersion in the frequency range exhibits two fractional power laws of (ε′−ε∞′)∝ω−p1 and (ε′−ε∞′)∝ωn1−1 with p1=0.12–0.18 and n1=0.95–0.96. These are close to the result predicted by the many-cluster anomalous conduction theory of fractal structure.Keywords
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