Direct observation of the atomic structure of interfaces in the systems Si-SiO2 and Ge-GeO2
- 30 June 1982
- journal article
- research article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 58 (1), 288-289
- https://doi.org/10.1016/0022-0248(82)90239-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Imaging of the silicon on sapphire interface by high-resolution transmission electron microscopyApplied Physics Letters, 1981
- Direct observation of a silicon-sapphire hetero-epitaxial interface by high resolution transmission electron microscopyPhysica Status Solidi (a), 1981
- The structure of ultrathin oxide on siliconApplied Physics Letters, 1980
- A high-resolution electron microscopy study of the Si-SiO2 interfaceApplied Physics Letters, 1978