X-Ray Observations of Diffusion-Induced Dislocations in Silicon
- 1 April 1962
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (4), 1540-1542
- https://doi.org/10.1063/1.1728769
Abstract
Diffusion‐induced dislocations in silicon have been studied by x‐ray diffraction microscopy. Lines lying in a (001) diffusion plane forming rectangular arrays have been identified as edge dislocations in [11̄0] and [110] directions with Burgers vectors ½ [110] and ½ [11̄0] and (001) glide plane.Keywords
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