Differences in optical properties of (111) and (100) CdTe/(Cd,Mn)Te superlattices
- 15 February 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (4), 2589-2593
- https://doi.org/10.1103/physrevb.33.2589
Abstract
Comparison of optical properties between (100) and (111) superlattices of CdTe/(Cd,Mn)Te of similar Mn concentrations (x>0.20) shows pronounced differences near the exciton ground-state energies. This contrast can be observed particularly in the photoluminescence and its excitation spectra at low lattice temperatures. Its origin may be due to dependences on crystalline direction of microscopic, strain-driven details at the heterointerfaces.Keywords
This publication has 12 references indexed in Scilit:
- Influence of high magnetic fields on exciton luminescence of Cd1−xMnxTe multiquantum wellsSolid State Communications, 1985
- (100) superlattices of CdTe-Cd0.76Mn0.24Te on (100)GaAsApplied Physics Letters, 1985
- Excitons in CdTe/Cd1−xMnxTe multiquantum wellsJournal of Luminescence, 1985
- Measurement of semiconductor heterojunction band discontinuities by x-ray photoemission spectroscopyJournal of Vacuum Science & Technology A, 1985
- Photoluminescence of a Cd0.55Mn0.45Te-CdTe multiple quantum well structure in a magnetic fieldApplied Physics Letters, 1985
- Interface localization of excitons in CdTe/Te multiple quantum wellsPhysical Review B, 1985
- Electronic structure of two-dimensional semiconductor systemsJournal of Luminescence, 1985
- Molecular beam epitaxy of diluted magnetic semiconductor (Cd1−xMnxTe) superlatticesApplied Physics Letters, 1984
- Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981