Isoelectronic scaling of recombination lasers to higher ion stages and shorter wavelengths
- 1 August 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (3), 212-214
- https://doi.org/10.1063/1.92682
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Simple metal-vapor recombination lasers using segmented plasma excitationApplied Physics Letters, 1980
- Power output enhancement of a laser-produced Cd plasma recombination laser by plasma confinementApplied Physics Letters, 1980
- Recombination lasers in Nd and CO_2 laser-produced cadmium plasmasOptics Letters, 1979
- Ultra-high-gain laser-produced plasma laser in xenon using periodic pumpingApplied Physics Letters, 1979
- Extended plasma source for short-wavelength amplifiersOptics Letters, 1978
- Recombination lasers in expanding CO2 laser-produced plasmas of argon, krypton, and xenonApplied Physics Letters, 1977
- Recombination lasers utilizing vapors of chemical elements. I. Principles of achieving stimulated emission under recombination conditionsSoviet Journal of Quantum Electronics, 1977
- Extension of 3p→3s Ion Lasers into the Vacuum Ultraviolet RegionApplied Optics, 1975
- Temperature and density of an expanding laser produced plasmaPlasma Physics, 1974