Variation of effective index of refraction in a double-heterojunction laser (In1−xGaxP1−zAsz)
- 1 May 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (5), 2091-2092
- https://doi.org/10.1063/1.323886
Abstract
Data (197 °K) on InP‐In1−xGaxP1−zAsz‐InP DH diodes are presented showing that the effective index of refraction of a semiconductor laser, [n (λ)−λ dn/dλ], is not a single curve but, instead, is a family of curves that depends upon injection level.Keywords
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