Diamond film synthesis in a chemically simplified system
- 20 November 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (21), 2248-2249
- https://doi.org/10.1063/1.102072
Abstract
We have synthesized diamond films in a flow tube system in which methane is added downstream from a microwave discharge in 90% argon/10% hydrogen at 3 Torr. The chemistry in this system is simplified because the methane is not exposed to temperatures higher than the 850 °C wall temperature of the flow tube. Therefore, only the reaction of hydrogen atoms with methane initiates the chemistry of this system. Furthermore, the system is at uniform temperature and flow speed. Under these conditions, diamond is deposited on silicon substrates for a time of about 1 ms after injection of the methane.Keywords
This publication has 6 references indexed in Scilit:
- Low-Pressure, Metastable Growth of Diamond and "Diamondlike" PhasesScience, 1988
- High rate synthesis of diamond by dc plasma jet chemical vapor depositionApplied Physics Letters, 1988
- Synthesis of diamond by decomposition of methane in microwave plasmaJournal of Materials Science Letters, 1986
- Growth of diamond particles from methane-hydrogen gasJournal of Materials Science, 1982
- A simple preparation of stable, nonreactive surfaces for gas kinetic studies of reactions of hydrogen atomsInternational Journal of Chemical Kinetics, 1979
- De-excitation of the Ar 3P2, 3P1, and 1P1 states in pure argon and in Ar/H2 or Ar/CO mixturesThe Journal of Chemical Physics, 1975