ELECTRON BEAM CHANNELING IN SINGLE-CRYSTAL SILICON BY SCANNING ELECTRON MICROSCOPY
- 15 May 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (10), 299-300
- https://doi.org/10.1063/1.1652657
Abstract
An annular semiconductor diode detector was used in a Cambridge Stereoscan electron microscope to resolve beam‐orientation‐dependent backscattered electron images not only as bands but also as extremely complicated defect and excess line patterns with angular resolution ≤ 5 × 10−4 rad. The resultant patterns are similar in appearance to transmission and reflection Kikuchi electron diffraction patterns.Keywords
This publication has 4 references indexed in Scilit:
- Scanning-electron-beam anomalous transmission patternsJournal of Materials Science, 1968
- Improvements in the Orientation Effect Observed by Scanning Electron MicroscopyPhysica Status Solidi (b), 1968
- Some comments on the interpretation of the ‘kikuchi-like reflection patterns’ observed by scanning electron microscopyPhilosophical Magazine, 1967
- Kikuchi-like reflection patterns obtained with the scanning electron microscopePhilosophical Magazine, 1967