Large spontaneous nucleation rate in implanted polycrystalline silicon films on SiO2
- 30 September 1987
- journal article
- Published by Elsevier in Materials Letters
- Vol. 5 (10), 393-395
- https://doi.org/10.1016/0167-577x(87)90047-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Implant-dose dependence of grain size and {110} texture enhancements in polycrystalline Si films by seed selection through ion channelingJournal of Applied Physics, 1986
- A Super Thin Film Transistor in Advanced Poly Si FilmsJapanese Journal of Applied Physics, 1986
- Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2Journal of Applied Physics, 1985
- The effect of germanium ion implantation dose on the amorphization and recrystallization of polycrystalline silicon filmsJournal of Applied Physics, 1981
- Low-temperature process to increase the grain size in polysilicon filmsElectronics Letters, 1981
- Crystallization in amorphous siliconJournal of Applied Physics, 1979
- Crystallization of amorphous silicon filmsPhysica Status Solidi (a), 1978
- Granulation, Phase Change, and Microstructure Kinetics of Phase Change. IIIThe Journal of Chemical Physics, 1941
- Kinetics of Phase Change. II Transformation-Time Relations for Random Distribution of NucleiThe Journal of Chemical Physics, 1940
- Kinetics of Phase Change. I General TheoryThe Journal of Chemical Physics, 1939