Impact of Polarization Relaxation on Ferroelectric Memory Performance
- 1 January 1991
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Electrical Measurement of Ferroelectric Capacitors for Non-Volatile Memory ApplicationsMRS Proceedings, 1990
- Fatigue and Aging in Sol-Gel Derived PZT Thin FilmsMRS Proceedings, 1990