The DSI diode—A fast large-area optoelectronic detector

Abstract

Fast double-Schottky-interdigitated diodes have been fabricated by evaporating Al-Schottky contacts on lowly doped n-GaAs (n=1014cm-3), These detectors have a relatively large light-sensitive area of 400 µm2. Rise and fall times are in the order of 10 ps. The external quantum efficiency is 25 percent at λ = 820 nm. The frequency response of the diodes is essentially flat up to 18 GHz, which is the limit of the measuring equipment.