Dislocation-free GaAs by the liquid encapsulation technique
- 31 May 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 13-14, 635-639
- https://doi.org/10.1016/0022-0248(72)90533-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Dislocation Etch Pits in Single Crystal GaAsPhysica Status Solidi (b), 1969
- Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystalsJournal of Physics and Chemistry of Solids, 1965
- A Technique for Pulling Single Crystals of Volatile MaterialsJournal of Applied Physics, 1962
- Production of Dislocations During Growth from the MeltJournal of Applied Physics, 1958
- Notizen: Herstellung von InAs- und GaAs-EinkristallenZeitschrift für Naturforschung A, 1956