The plasma effect in silicon semiconductor radiation detectors
- 1 September 1974
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 120 (2), 261-268
- https://doi.org/10.1016/0029-554x(74)90044-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Charge collection in silicon detectors for strongly ionizing particlesNuclear Instruments and Methods, 1973
- Characterization of high resistivity CdTe for γ-ray detectorsNuclear Instruments and Methods, 1971
- Plasma delay and plasma time jitter in subnanosecond timing with a surface barrier detectorNuclear Instruments and Methods, 1971
- Plasma time and related delay effects in solid state detectorsNuclear Instruments and Methods, 1969
- Plasma effects and charge collection time in solid state detectorsNuclear Instruments and Methods, 1969
- Plasma Time in Semiconductor DetectorsIEEE Transactions on Nuclear Science, 1968
- Transient Response of Surface Barrier Detectors as a Function of Fission Fragment EnergyIEEE Transactions on Nuclear Science, 1967
- Plasma effects in semiconductor detectorsNuclear Instruments and Methods, 1967
- Studies of the Response Speed of Silicon Surface Barrier Detectors, When Irradiated with Different ParticlesIEEE Transactions on Nuclear Science, 1966
- Silicon p-n Junction Radiation DetectorsIRE Transactions on Nuclear Science, 1960