Current-voltage characteristics and transport mechanism of solar cells based on ZnO nanorods/In2S3∕CuSCN

Abstract

Temperature dependent current-voltage characteristics in the dark and under illumination have been analyzed on up to 3.2% efficient solar cells with extremely thin absorber based on ZnO nanorods/${\mathrm{In}}_2{\mathrm{S}}_3∕\mathrm{Cu}\mathrm{SCN}$ structures. The diode ideality factor and the open circuit voltage are strongly influenced on a thermal activation process. Significant enhancement of the devices efficiency by annealing at moderate temperatures has been demonstrated. After this annealing, the activation energy of the saturation current increased from $1.00\text{to}1.46\mathrm{eV}$ (in the dark). Transport mechanisms at the ${\mathrm{In}}_2{\mathrm{S}}_3∕\mathrm{Cu}\mathrm{SCN}$ interface region are discussed.