Lasing from InGaAs quantum dots in an injection microdisk

Abstract

An injection microdisk laser structure is realized using self-assembled InGaAs quantum dots (QDs) as the active layer. Single-mode continuous-wave lasing at $\text{∼5\hspace{0.17em}}\mathrm{K}$ from double layer ${\text{(∼2.5×10}}^{10}\hspace{0.17em}{\mathrm{cm}}^{\text{−2}}$ per layer) QDs in $\text{∼4\hspace{0.17em}μ}\mathrm{m}$ diameter microdisks is reported. The threshold current of this device was as low as 69 μA. The estimated spontaneous emission factor is $\text{>0.05.}$