SiGe-technology and components for mobile communication systems
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- 1-W SiGe power HBTs for mobile communicationIEEE Microwave and Guided Wave Letters, 1996
- Low-frequency noise characteristics of UHV/CVD epitaxial Si- and SiGe-base bipolar transistorsIEEE Electron Device Letters, 1996
- High speed SiGe heterobipolar transistorsJournal of Crystal Growth, 1995
- Class-A SiGe HBT power amplifiers at C-band frequenciesIEEE Microwave and Guided Wave Letters, 1995
- Si/Si/sub 1-x/Gex heterojunction bipolar transistors with high breakdown voltageIEEE Electron Device Letters, 1995
- SiGe-HBTs with high fT at moderate current densitiesElectronics Letters, 1994