Evidence for surface asperity mechanism of conductivity in oxide grown on polycrystalline silicon
- 1 November 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (11), 4834-4836
- https://doi.org/10.1063/1.323510
Abstract
High conductivity observed in oxides grown on polycrystalline silicon has been previously speculated as being due to asperities on the silicon surface, which enhance the oxide field. Direct evidence of these asperities is shown here in SEM micrographs. The presence of the asperities is strongly correlated with the oxide conductivity (as controlled by the oxidation temperature).This publication has 5 references indexed in Scilit:
- Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structureIEEE Transactions on Electron Devices, 1976
- Interface effects and high conductivity in oxides grown from polycrystalline siliconApplied Physics Letters, 1975
- Mechanism of electrical breakdown in SiO2 filmsJournal of Applied Physics, 1975
- Ionic Contamination and Transport of Mobile Ions in MOS StructuresJournal of the Electrochemical Society, 1971
- High Field Electron Emission from Irregular Cathode SurfacesJournal of Applied Physics, 1955