Determination of the Exciton Formation in Quantum Wells from Time-Resolved Interband Luminescence
- 20 September 2004
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 93 (13), 137401
- https://doi.org/10.1103/physrevlett.93.137401
Abstract
We present the results of a detailed time-resolved luminescence study carried out on a very high quality InGaAs quantum well sample where the contributions at the energy of the exciton and at the band edge can be clearly separated. We perform this experiment with a spectral resolution and a sensitivity of the setup, allowing us to keep the observation of these two separate contributions over a broad range of times and densities. This allows us to directly evidence the exciton formation time, which depends on the density as expected from theory. We also denote the dominant contribution of excitons to the luminescence signal, and the lack of thermodynamical equilibrium at low densities.Keywords
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This publication has 26 references indexed in Scilit:
- Ultrafast terahertz probes of transient conducting and insulating phases in an electron–hole gasNature, 2003
- Effect of exciton-carrier thermodynamics on the GaAs quantum well photoluminescencePhysical Review B, 1996
- Dynamical equilibrium between excitons and free carriers in quantum wellsSolid State Communications, 1995
- Free exciton versus free carrier luminescence in a quantum wellJournal de Physique IV, 1993
- Generation rate of 2D excitons in quantum wellsJournal of Luminescence, 1993
- Enhanced radiative recombination of free excitons in GaAs quantum wellsPhysical Review Letters, 1991
- Dynamics of exciton formation and relaxation in GaAs quantum wellsPhysical Review B, 1990
- Dynamics of exciton transfer between monolayer-flat islands in single quantum wellsApplied Physics Letters, 1987
- Large room-temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structuresApplied Physics Letters, 1982
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981