Minimization of suboxide transition regions at Si–SiO2 interfaces by 900 °C rapid thermal annealing
- 1 July 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (4), 1074-1079
- https://doi.org/10.1116/1.589417
Abstract
No abstract availableKeywords
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