HVEM investigations of crystal defects in S-doped LEC-GaP crystals
- 1 February 1979
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 39 (2), 183-194
- https://doi.org/10.1080/01418617908236892
Abstract
Crystal defects in GaP crystals produced by the liquid-encapsulated-Czochralski (LEC) method were studied by etch-pit observations and by high-voltage electron microscopy. Three types of etch pits originating from precipitates, long dislocation lines and dislocation loops were distinguished. By TEM observations both coherent and incoherent precipitates, long dislocation lines, Frank loops accompanying stacking faults of intrinsic type and polygonal dislocation loops were found. The polygonal loops formed by straight dislocation lines along crystallographic directions were determined to be interstitial-type edge-dislocation loops on {110} planes having a Burgers sector of α/2〈110〉. The formation mechanism of the polygonal loops and the correspondence between etch pits and TEM images are discussed.Keywords
This publication has 20 references indexed in Scilit:
- Microdefects and striations in dislocation-free LEC-GaP crystalsJournal of Crystal Growth, 1977
- Characterization of defects in GaP and GaAsP graded heterojunctions by transmission electron microscopyJournal of Crystal Growth, 1975
- Formation and nature of swirl defects in siliconApplied Physics A, 1975
- Dissociation of dislocations in GaPPhilosophical Magazine, 1974
- The nature of defects inn+ gallium arsenidePhilosophical Magazine, 1974
- Enhanced Sensitivity of Anomalously Transmitted Intensity to Lattice Defects in Asymmetric Bragg-Case Diffraction of X-RaysJapanese Journal of Applied Physics, 1974
- Etching Studies of Impurity Precipitates in Pulled GaP CrystalsJournal of the Electrochemical Society, 1971
- HIGH-EFFICIENCY RED-EMITTING GaP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (η≃6%) AND CZOCHRALSKI (η≃2%) SUBSTRATESApplied Physics Letters, 1970
- Cristallisation du phosphure de gallium a partir d'une fonte stoechiometrique et en solution de galliumMaterials Research Bulletin, 1968
- Electron Microscopic Images of Single and Intersecting Stacking Faults in Thick Foils. Part I: Single FaultsPhysica Status Solidi (b), 1963